- Technical Parameter
Product Attributes | |
---|---|
Categories | Discrete Semiconductor Products |
Series | HEXFET® |
Packaging | Tape & Reel (TR) |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 146nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3247pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 200W (Tc) |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 62A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Additional Resources | |
---|---|
Standard Package | 800 |
Other Names | IRF3205STRLPBF-ND IRF3205STRLPBFTR SP001576758 |
Datasheet | |
---|---|
IRF3205(S,L)PbF |
- Commodity Description
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