- Technical Parameter
| Product Attributes | |
|---|---|
| Categories | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Not For New Designs |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 240 mOhm @ 1.3A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Additional Resources | |
|---|---|
| Standard Package | 95 |
| Other Names | SP001576900 |
| Datasheet | |
|---|---|
| IRF6216PbF | |
- Commodity Description
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