- Technical Parameter
Product Attributes | |
---|---|
Categories | Discrete Semiconductor Products |
Series | - |
Packaging | Tube |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.9V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Additional Resources | |
---|---|
Standard Package | 1,000 |
Other Names | SP001564028 |
Datasheet | |
---|---|
IRFB4020PBF |
- Commodity Description
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