- Technical Parameter
Product Attributes | |
---|---|
Categories | Discrete Semiconductor Products |
Series | HEXFET® |
Packaging | Tube |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1690pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3W (Ta), 110W (Tc) |
Rds On (Max) @ Id, Vgs | 39 mOhm @ 18A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | IPAK (TO-251) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Additional Resources | |
---|---|
Standard Package | 3,000 |
Other Names | *IRFU3410PBF SP001578398 |
Datasheet | |
---|---|
IRFR/IRFU3410PbF |
- Commodity Description
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