- Technical Parameter
| Product Attributes | |
|---|---|
| Categories | Discrete Semiconductor Products |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 110W (Tc) |
| Rds On (Max) @ Id, Vgs | 39 mOhm @ 18A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | IPAK (TO-251) |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Additional Resources | |
|---|---|
| Standard Package | 3,000 |
| Other Names | *IRFU3410PBF SP001578398 |
| Datasheet | |
|---|---|
| IRFR/IRFU3410PbF | |
- Commodity Description
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