- Technical Parameter
Product Attributes | |
---|---|
Categories | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Series | HEXFET®, StrongIRFET™ |
Packaging | Tube |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 258nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 15570pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 375W (Tc) |
Rds On (Max) @ Id, Vgs | 1.9 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Additional Resources | |
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Standard Package | 1,000 |
Other Names | SP001568416 |
Datasheet | |
---|---|
IRL60B216 |
- Commodity Description
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