The expanded 8.7 mm creepage and clearance distances offer extra safety in high-pollution environments.
Forward currents up to 40 A are available to address EV DC charging, solar energy systems, uninterruptible power supply (UPS) and other industrial applications.
Used in combination with silicon IGBT or super-junction MOSFET, the CoolSiC Schottky 1200 V G5 diode raises efficiency up to one percent compared to when a silicon diode is used.
For example, for a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems. The output power of the PFC and DC-DC stages can thus be increased by 40% or more.
Other than negligible reverse recovery losses – the signature feature of SiC Schottkys –, the CoolSiC Schottky 1200 V G5 diode portfolio comes with best-in-class forward voltage (V F) as well as the slightest increase of V Fwith temperature and highest surge current capability.
The CoolSiC Schottky 1200 V G5 diode with a 10 A rating can serve as a drop-in replacement for a 30 A silicon diode.