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Toshiba announces new fabs that will double power semiconductor capacity
Toshiba Electronic Devices & Storage Corporation has announced that it will build a new 300mm (12-inch) wafer fabrication facility at its main discrete semiconductor production site (Kaga Toshiba Electronics Corporation) in Ishikawa Prefecture, Japan. factories to expand power semiconductor production capacity.
Toshiba said construction of the fab, which uses 100% renewable energy, will be carried out in two phases to optimize the pace of investment according to market trends, with the first phase of production scheduled to start in fiscal 2024. Once the first phase of production capacity is fully loaded, its power semiconductor production capacity will reach 2.5 times that of 2021.

The Nikkei previously reported that Toshiba will invest about 100 billion yen ($870 million) to build the plant.
Power devices are essential components for managing and reducing power consumption in every kind of electronic equipment, and for achieving a carbon neutral society. Current demand is expanding on vehicle electrification and the automation of industrial equipment, with very strong demand for low-voltage MOSFETs (metal oxide semiconductor field effect transistors) and IGBTs (insulated-gate bipolar transistors) and other devices. To date, Toshiba has met this demand growth by increasing production capacity on 200-milimeter lines, and expediting the start of production on 300-milimeter production lines from the first half of fiscal 2023[2] to the second half of fiscal 2022. Decisions on the new fab’s overall capacity and equipment investment, the start of production, production capacity and production plan will reflect market trends.
Toshiba said it will expand its power semiconductor business and improve competitiveness through timely investment and R&D in the future, enabling it to respond to rapidly growing demand and contribute to a low-energy society and carbon neutrality.
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