Development Solution For Three-Phase Multilevel Inverter Using MOSFET

Development Solution for Three-Phase Multilevel Inverter Using MOSFET

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The three-phase multilevel inverter using MOSFET is an advanced inverter technology that converts DC power into efficient AC power.

Solution Overview

When designing a MOSFET inverter, the following factors need to be considered:

1. Circuit topology: The choice of circuit topology, such as sinusoidal waveform converter, AC-DC-AC converter, etc., needs to be based on specific application scenarios.

2. MOSFET selection: The appropriate MOSFET devices need to be selected based on circuit parameters such as operating voltage, current, and power, to ensure circuit stability and reliability.

3. Circuit design: Circuit design includes the design and selection of components such as PWM controllers, power switching devices, filters, etc.

4. Temperature control: MOSFET inverters are susceptible to damage in high-temperature environments, so temperature control measures need to be taken, such as temperature compensation for PWM controllers, heat dissipation for capacitor filters, etc.

5. Reliability design: The reliability of MOSFET inverters is crucial, and various tests and verifications, such as overload testing, short-circuit testing, temperature testing, etc., need to be conducted to ensure circuit stability and reliability.

This reference design provides design guidelines, data, and other resources for a phase multilevel inverter with a 5-level output. It uses 150V MOSFETs to drive an AC 200V motor.

The schematic diagram of a three-phase multipoint grid-tied inverter solution.

Features:

· Uses 150V MOSFET to drive AC 200V motor

· Dimensions: 240mm x 150mm

· Utilizes TLP152 gate driver optocoupler, featuring small size, high-speed switching, common mode suppression, and high voltage isolation

· Incorporates TPH9R00CQ5 power MOSFET as the switching device, with high-speed built-in diode to reduce switching losses

· Implements multi-level technology in the MOSFET inverter, decomposing the AC power into multiple frequency levels to reduce the size and power consumption of the inverter. In MOSFET inverters, multi-level technology typically adopts a three-phase four-level

 design to accommodate the characteristics of three-phase AC power.

· Employs multi-layer MOSFET configuration for efficient and precise voltage output control

· Inverter features 5-level PWM voltage output, with input voltage of DC 400V and control power input of DC 5V

· Three-phase multi-level inverters offer advantages such as high efficiency, energy-saving, and reliability

· The selection and design of the inverter should be based on specific application scenarios to achieve optimal results

 design to accommodate the characteristics of three-phase AC power.

· Employs multi-layer MOSFET configuration for efficient and precise voltage output control

· Inverter features 5-level PWM voltage output, with input voltage of DC 400V and control power input of DC 5V

· Three-phase multi-level inverters offer advantages such as high efficiency, energy-saving, and reliability

· The selection and design of the inverter should be based on specific application scenarios to achieve optimal results

Applications:

When it comes to specific products, three-phase multi-level inverters can be applied 

Three-phase multipoint grid-tied inverter schematic diagram.

in the following fields and products:

1. Solar photovoltaic (PV) systems: Inverters in solar PV systems convert the DC power generated by solar panels into AC power. Three-phase multi-level inverters can provide high-quality AC output, suitable for large-scale PV power plants and distributed PV systems.

2. Wind power systems: Inverters in wind power systems convert the DC power generated by wind turbines into AC power. Three-phase multi-level inverters can provide more efficient and stable energy conversion, adapting to different wind speeds and power output requirements.

3. Electric vehicle (EV) charging stations: EV charging stations need to convert the AC power from the grid into DC power suitable for charging electric vehicles. Three-phase multi-level inverters can provide adjustable output voltage and current to meet the charging needs of different models and requirements (fast charging may require MOSFET and DC-DC power management chip replacement).

4. Industrial drive systems: Motor drives in industrial automation systems require stable AC power supply. Three-phase multi-level inverters can provide high-quality AC output for driving various industrial equipment such as pumps

Parameter

Critical device

Device introduction

Power MOSFET TPH9R00CQ5

This inverter uses TPH9R00CQ5 for switching.

Features:

Fast reverse recovery time: trr = 40 ns (Typ.)

Low reverse recovery charge: Qrr = 34 nC (Typ.)

Low gate charge: Qg = 11.7 nC (Typ.)

Low resistance: Rds(on) = 7.3 mΩ (Typ.) (Vgs = 10 V)

Low leakage current: IDSS = 10μA (max) (Vds = 150 V)

Enhancement mode for easy use: Vth = 3.1 to 4.5 V (Vds = 10 V, ID = 1.0 mA)

Gate driver optocoupler TLP152

This inverter uses TLP152 as the gate driver for the MOSFET used in the inverter circuit.

Features:

Buffer logic output type (totem pole output)

Peak output current: ±2

.5A (max)

Operating temperature range: -40 to 100℃

Supply current: 3.0 mA (max)

Supply voltage: 10 to 30 V

Threshold input current: 7.5 mA (max)

Propagation delay time: tpHL = 190 ns (max), tpLH = 170 ns (max)

Common mode transient immunity: ±20 kV/μs (min)

Isolation voltage: 3750 Vrms (min)

Compliance with safety standards

CMOS digital integrated chip TC7MPB9307FT

Low voltage, low power 8-bit dual power supply bus switch

Features:

Wide operating temperature range: Topr = -40 to 125°C (Note 1)

Operating voltage: 1.8 V to 25V / 18 V to 33 V / 18V to 5.0V / 25V to 33V / 25V to 5.0V / 3.3V to 5.0 V bidirectional interface

Direction vector: Vssa = 1.65 to 5.0V, Vsv = 2.5V to 5V

Low ON-resistance: ron = 5.0Ω (typ.) @ VIS = 0 V, Is = 30 mA, Vcca = 3.0 V, VCCB = 4.5V

Electrostatic discharge performance: Machine mode 200V, Human mode 2000V

Output enable input with 5.5V tolerance and power-down protection.

Package: TSSOP20

Note 1: The operating range specification of Topr = -40°C to 125°C applies only to products manufactured after April 2020.

Comparator TC75W57FK

This inverter uses TC75W57FK as the comparator for overcurrent detection.

Features:

Low current consumption: Idd = 200 μA

(Typ.)

Single power supply operation

Wide common mode input voltage range: Vss to Vdd-0.9 V

Push-pull output circuit

Low input bias current

Small package

Switching regulator TK17V65W

Features:

Low resistance: Rds(on) = 0.175Ω

Uses super junction structure: DTMOS

Easy control of gate switching

Enhancement mode: Threshold voltage Vth = 2.5 to 3.5V (Voltage VDs = 10V, ID = 0.9mA)

Load switch SSM3K15AFS

Features:

Type: N-channel

Drain-source voltage (Vdss): 30V

Continuous drain current (Id): 100mA

Power dissipation (Pd): 100mW

On-resistance (RDS(on)@Vgs,Id): 3.6Ω@4V, 10mA

Threshold voltage(Vgs(th)@ld)：1.5V@100uA

input capacitance(Ciss@Vds)：13.5pF@3V

Switching Regulator TPN7R006PL

Features:

- High-speed switching

- Small gate charge: Qsw = 6.8 nC (typical)

- Small output charge: Qoss = 20 nC (typical)

- Low drain-source on-resistance: RDS (typical ON) = 54 mΩ (Vcs = 10V)

- Low leakage current: lpss = 10 μA (maximum) (voltage difference = 60V)

- Enhancement mode: Vu = 1.5 to 25V (Vbs = 10V, Ib = 0.2mA)

Services and Support:

- Overall solutions

- PCB design

- MOSFET gate driver optocoupler selection

- Relevant design reference documents

- Bill of materials (BOM)

If you have any other questions or need further assistance, feel free to let me know.